3.0 MeV proton-irradiation effects on the GaAs middle cell and the GaInP top cell of n+-p GaInP/GaAs/Ge triple-junction (3J) solar cells have been analyzed using temperature-dependent photoluminescence (PL) technique. The E5 (Ec - 0.96 eV) electron trap in the GaAs middle cell, the H2 (Ev + 0.55 eV) hole trap in the GaInP top cell are identified as the proton irradiation-induced non-radiative recombination centers, respectively, causing the performance degradation of the triple-junction solar cells. The GaAs middle cell is less resistant to proton irradiation than the GaInP top cell. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com
Crystal wafer(SiC wafer,gan wafer,gaas wafer,ge wafer,CZT wafer,AlN wafer,Si wafer) A wafer, also called a slice or substrate, is a thin slice of semiconductor material, such as a crystalline silicon, used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells. The wafer serves as the substrate for microelectronic devices built in and over the wafer and undergoes many microfabrication process steps such as doping or ion implantation, etching, deposition of various materials, and photolithographic patterning. Finally the individual microcircuits are separated (dicing) and packaged. XiamenPowerway Advanced Material Co.,Ltd offers wide range crystal wafer as follows: 1)SiC crystal wafer:2”,3”,4” Orientation :0°/4°±0.5° Single Crystal 4H/6H Thickness: (250 ± 25) μm, (330 ± 25) μm,(430 ± 25) μm Type:N/SI Dopant:Nitrogen/V Resistivity (RT): 0.02 ~ 0.1 Ω·cm/>1E5 Ω·cm FWHM: A<30 arcsec B/C/D <50 arcsec Packaging：Single wafer box or multi wafer box 2)GaN crystal wafer:1.5",2”,3",4"6" Free-standing (gallium nitride) GaN Substrate Orientation:C-axis(0001)+/-0.5° Thickness:350um Resistivity(300K): <0.5Ω·cm >10^6Ω·cm Dislocation Density:<5x10^6cm-2 TTV:<=15um BOW:<=20um Surface Finish:Front Surface:Ra<0.2nm.Epi-ready polished 3)Germanium crystal wafer: 2”,3”,4” Orientation :+/- 0.5 ° Type / Dopant : N / Sb; P / Ga Diameter : 100 mm Thickness : 525 +/- 25 um Resistivity : 0.1 ~ 40 ohm-cm Primary flat location :+/-0.5 degree Primary flat length : 32.5 +/-2.5 mm Front surface : Polished Back surface : Etched Edge surface finishing : cylindrical ground Surface roughness ( Ra ) : <=5A EPD : <= 5000 cm-2 Epi ready : yes Package : Single wafer container 4)GaAs crystal wafer: 2”,3”,4”,6” Thickness:220~500m Conduction Type:SC/n-type Growth Method:VGF Dopant:Silicon/Zn Orientation:(100)20/60/150 off (110) Resistivity at RT:(1.5~9)E-3 Ohm.cm Packaging：Single wafer container or cassette 2" LT-GaAs Thickness：1-2um or 2-3um Resistivity(300K)：>108 Ohm-cm Polishing：Single side polished (GaAs)Gallium Arsenide Wafers for LED/LD/Microelectronics/ Applications 5)CZT crystal wafer(15*15±0.05mm,25*25±0.05mm,30*30±0.05mm) Orientation (111)B,(211)B Thickness: Doped:Undoped Resistivity:≥1MΩ.cm EPD≤1x105/cm3 Double side polished 6)AlN crystal wafer:2” 7)Silicon crystal wafer: 2”,3”,4”,6”,8” 8)LiNbO3 crystal wafer: 2”,3”,4”,6” 9)LiTaO3 crystal wafer: 2”,3”,4”,6” 10)InAs,InP crystal wafer: 2”,3”,4” 11)Othercrystal wafer with small size:ZnO, MgO, YSZ, STO, LSAT, TiO2, LAO, Al2O3,SrTiO3, LaAlO3 Standard wafer sizes Silicon wafers are available in a variety of diameters from 25.4 mm (1 inch) to 300 mm (11.8 inches). Semiconductor fabrication plants (also known as fabs) are defined by the diameter of wafers that they are tooled to produce. The diameter has gradually increased to improve throughput and reduce cost with the current state-of-the-art fab using 300 mm, with a proposa...
Detail Application of Silicon Carbide Because of SiC physical and electronic properties,silicon carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device. Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, here we list some detail application and make some explanations: 1.SiC substrate for X-ray monochromators: such as using SiC's large d-spacing of about 15 A 2.SiC substrate for high voltage devices 3.SiC substrate for diamond film growth by microwave plasma-enhanced chemical vapor deposition 4.For silicon carbide p-n diode 5.SiC substrate for optical window: such as for very short (< 100 fs) and intense (> 100 GW/cm2) laser pulses with a wavelength of 1300 nm. It should have a low absorption coefficient and a low two photon absorption coefficient for 1300 nm 6.SiC substrate for heat spreader: For example,the Silicon carbide crystal will be capillary bonded on a flat gain chip surface of VECSEL (Laser) to remove the generated pump heat. Therefore, the following properties are important: 1)Semi-insulating type required to prevent free carrier absorption of the laser light 2) Double side polished are preferred 3)Surface roughness: < 2nm, so that the surface is enough flat for bonding 7.SiC substrate for THz system application: Normally it require THz transparency 8.SiC substrate for epitaxial graphene on SiC:Graphene epitaxy on off axis substrate and on axis are both available, surface side on C-face or Si face are both available. 9.SiC substrate for process development loke ginding, dicing and etc 10.SiC substrate for fast photo-electric switch 11.SiC substrate for heat sink: thermal conductivity and thermal expansion are concerned. 12.SiC substrate for laser: optical, surface and stranparence are concerned. 13.SiC substrate for III-V epitaxy, normally off axis substrate are required. Xiamen Powerway Advanced Material Co.,Limited is an expert in SiC substrate, can give researchers suggestions in different application. Source:PAM-XIAMEN If you need more information about Detail Application of Silicon Carbide, please visit http://www.semiconductorwafers.net or send us email at luna@powerwaywafer.com and powerwaymaterial@gmail.com
On the base of the physical analytical models based on Poisson's equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact have been simulated. It is shown on the base of analysis of current–voltage characteristics in terms of classical thermionic emission theory it is shown that the proposed simulation model of Schottky diode corresponds to the almost "ideal" diode with ideality factor n equals 1.1. Because of this it is determined that the effective Schottky barrier height phivB equals 1.57 eV and 1.17 eV for Ni/6H and Ti/4H silicon carbide Schottky diode type, respectively. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com
We report on the molecular beam epitaxy (MBE) growth and device characteristics of Ge solar cells. Integrating a Ge bottom cell beneath a lattice-matched triple junction stack grown by MBE could enable ultra-high efficiencies without metamorphic growth or wafer bonding. However, a diffused junction cannot be readily formed in Ge by MBE due to the low sticking coefficient of group-V molecules on Ge surfaces. We therefore realized Ge junctions by growth of homo-epitaxial n-Ge on p-Ge wafers within a standard III–V MBE system. We then fabricated Ge solar cells, finding growth temperature and post-growth annealing to be key factors for achieving high efficiency. Open-circuit voltage and fill factor values of ~0.175 V and ~0.59 without a window layer were obtained, both of which are comparable to diffused Ge junctions formed by metal-organic vapor phase epitaxy. We also demonstrate growth of high-quality, single-domain GaAs on the Ge junction, as needed for subsequent growth of III–V subcells, and that the surface passivation afforded by the GaAs layer slightly improves the Ge cell performance. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com
We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Epi service for GaAs-based laser wafers growth and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line. Dr. Shaka, said, "We are pleased to offer Quantum Well Laser Structure to our customers including many who are developing better and more reliable for the basic active element (laser light source) of the Internet fiber optic communication. Our Laser diode epitaxial structure has excellent properties, quantum well lasers bases on gallium arsenide and indium phosphide wafers, lasers utilizing quantum wells and the discrete electron modes are fabricated by both MOVPE and MBE techniques, are produced at a variety of wavelengths from the ultraviolet to the THz regime. The shortest wavelength lasers rely on gallium nitride-based materials. The longest wavelength lasers rely on the quantum cascade laser design. Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our Epi service for GaAs-based laser wafers growth are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products." PAM-XIAMEN's improved GaAs-based laser wafers product line has benefited from strong tech, support from Native University and Laboratory Center. Now it shows an example as follows: 808nm InGaAsP/InP MQW Laser structure Layer Material X Y Strain tolerance PL Thickness Type Level (ppm) (nm) (um) +/-500 6 [Al(x)Ga]In(y)P 0.3 0.49 +/-500r 5 GaIn(x)P 0.49 0.5 U/D +/-500 798 0.013 U/D +/-500 2 [Al(x)Ga]In(y)P 0.3 0.49 +/-500 1 GaAs 0.5 N N Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer. About Quantum Well Laser Structure P: Thanks for your enquiry, yes we can offer, can you offer structure? (cm-3) 8 GaAs 0.1 P >2.00E19 7 GaIn(x)P 0.49 0.05 P 1 P +/-500 4 GaAs(x)P 0.77 770 3 GaIn(x)P 0.49 0.5 U/D 1 N 0 GaAs substrate 808nm laser structure Layer Material X Y Strain tol...
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