Glass Wafer We are one of the world’s leading glass wafer suppliers, provide thin & ultra-thin glass wafers and substrates which are made of different materials, such as Borofloat, Fused Silica & Quartz, BK7, Soda Lime etc for MEMS, fiber optic AWG, LCD panels and OLED substrates application. These wafers are all SEMI Standards including dimensional, flat and notch specifications, also we offer custom specifications designed to your unique needs including alignment marks, holes, pockets, edge profile, thickness, flatness, surface quality, cleanliness or any other details critical to your application, including semiconductor, medical science, communications, lasers, infrared, electronics, measuring instruments, military, and aerospace. Parameter Measurement Diameter 2", 4", 6", 8", 10" Dimensional Tolerance ±0.02μm Thickness 0.12mm, 0.13mm, 0.2mm, 0.25mm, 0.45mm Thickness Tolerance ±10μm Thickness Variation (TTV) < 0.01mm Flatness 1/10 Wave/Inch Surface Roughness (RMS) <1.5nm Scratch and Dig 5/2 Particle Size <5μm Bow/Warp <10μm For the customized dimension, please contact us Glass Wafer Process Wafer Cutting: blank wafer are ready through that thick sheets are water jetted and blocks are wire sawn Ground Edge: the wafer edge is cylindrical grounded on the Edge Grinding Station. Wafer Lapping: the wafer is lapped to appointed thickness. Wafer Polishing: Polishing the wafer gives it the mirrored, super-flat surface required for the fabrication. Wafer Cleaning: it is the removal of chemical and particle impurities without altering or damaging the wafer surface or substrate on multiple cleaning lines. Wafer Inspection: inspect to various quality levels under the appropriate lighting condition in the Class 100 Clean Room. Wafer Packaging: All wafers are packed in the single wafer containers.
Silicon Carbide List 4" 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S4H-100-N-SIC-350-A 4" 4H-N 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-100-N-SIC-350-B 4" 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-100-N-SIC-350-D 4" 4H-N 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% S4H-100-N-SIC-370-L 4" 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-100-N-SIC-440-AC 4" 4H-N 0°/4°±0.5° 440±25um D * As-cut >75% S4H-100-N-SIC-C0510-AC-D 4" 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-100-N-SIC-C1015-AC-C 4" 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * 3" 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S4H-76-N-SIC-350-A 3" 4H-N 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-76-N-SIC-350-B 3" 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-N-SIC-350-D 3" 4H-N 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% S4H-76-N-SIC-370-L 3" 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-76-N-SIC-410-AC 3" 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-76-N-SIC-C0510-AC-D 3" 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-76-N-SIC-C1015-AC-D 3" 4H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S4H-76-N-SIC-C0510-AC-C 3" 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S4H-76-N-SIC-C1015-AC-C 3" 4H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * SEMI-INSULATING S4H-76-SI-SIC-350-A 3" 4H-SI 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-76-SI-SIC-350-B 3" 4H-SI 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-SI-SIC-350-D 3" 4H-SI 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% 2" 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S4H-51-N-SIC-330-A 2" 4H-N 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S4H-51-N-SIC-330-B 2" 4H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S4H-51-N-SIC-330-D 2" 4H-N 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S4H-51-N-SIC-370-L 2" 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-51-N-SIC-410-AC 2" 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-51-N-SIC-C0510-AC-D 2" 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-51-N-SIC-C1015-AC-D 2" 4H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S4H-51-N-SIC-C0510-AC-C 2" 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S4H-51-N-SIC-C1015-AC-C 2" 4H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * 2" 6H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S6H-51-N-SIC-330-A 2" 6H-N 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S6H-51-N-SIC-330-B 2" 6H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-N-SIC-330-D 2" 6H-N 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S6H-5...
Nitride Semiconductor Wafer Free-standing Gallium Nitride Item No. Type Orientation Thickness Grade Micro Defect Density Surface Usable area N-Type PAM-FS-GaN50-N 2" N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN45-N dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN40-N dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN38-N dia.38mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN25-N dia.25.4mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN15-N 14mm*15mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN10-N 10mm*10.5mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN5-N 5mm*5.5mm, N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% SEMI-INSULATING PAM-FS-GaN50-SI 2" N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN45-SI dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN40-SI dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN38-SI dia.38mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN25-SI dia.25.4mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN15-SI 14mm*15mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN10-SI 10mm*10.5mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN5-SI 5mm*5.5mm, N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% Gallium Nitride Template,AlN template,InGaN template,AlGaN template Item No. Type Orientation Thickness Grade Dislocation Density Surface Usable area PAM-76-GaN-T-N GaN template,N type 0°±0.5° 20/30/40um / <1x10^8/cm2 P/P or P/L >90% PAM-50-GaN-T-N GaN template,N type 0°±0.5° 20/30/40um / <1x10^8/cm2 P/P or P/L >90% PAM-50-GaN-T-P GaN template,P type 0°±0.5° 2um / / P/P or P/L >91% PAM-50-GaN-T-SI GaN template,Semi-insulating 0°±0.5° 30/90um / <1x10^8/cm2 P/P or P/L >90% PAM-50-AlN-T-SI AlN template,Semi-insulating 0°±0.5° 1um / / P/P or P/L >90% PAM-50-INGaN-T-SI InGaN template 0°±0.5° 100-200nm / 10^8/cm2 P/P or P/L >90% PAM-50-AlGaN-T-SI AlGaN template 0°±0.5° 1-5um / * P/P or P/L >90% Gallium Nitride Epi Wafer (LED Wafer) Item No. Type Orientation Thickness Grade Wavelength Surface Usable area N-Type PAM-50-GaN-EPI- BLUE-F / 0°±0.5° 436um / 445-475nm P/L >90% PAM-50-GaN-EPI-BLUE-PSS / 0°±0.5° 436um / 445-475nm P/L >90% PAM-50-GaN-EPI-GREEN-F / 0°±0.5° 436um / 510-530nm P/L >90% PAM-50-GaN-EPI-GREEN-PSS / 0°±0.5° 436um / 510-530nm P/L >90% Gallium Nitride UV LED Item No. PKG Output Power Forward Voltage Grade Wavelength Deg. FWHM PAM-GaN-LED-UV-265 03WG/SMD/TO39 / / / 265nm+/-3nm / 10nm PAM-GaN-LED-UV-280 03WG/SMD/TO39 / 6.8-7.5 / 280nm+/-3nm 140/60 10nm PAM-GaN-LED-UV-310 03WG/SMD/TO39 / 6.5-7.2 / 310nm+/-3nm 140/60 10nm As a GaN wafer supplier,we offer gallium semiconductor list for your reference, if you n...
Gallium Semiconductor Wafer GaAs Wafer Substrate - Gallium Arsenide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 GaAs （100） 25.4 4000±50 DSP >1E7 Undoped N/A N/A <1E5 1-100 GaAs （100） 50.7 350-370 SSP >1E7 Undoped N/A >3500 <10000 1-100 GaAs (100)2°±0.50 off toward (011) 50.7 350±10 SSP (0.8-9)E-3 N/Si (8)E17 2000-3000 <5000 1-100 GaAs (100)6°±0.50 off toward (011) 50.7 350±20 SSP (0.8-9)×10-3 N/Si (0.2-4)E18 ≥1000 ≤5000 1-100 GaAs （100） 50.8 350 SSP N/A P/Zn (1-5)E19 N/A <5000 1-100 GaAs （100） 50.8 5000±50 SSP >1E8 Undoped N/A N/A N/A 1-100 GaAs （100） 50.8 4000±50 SSP >1E7 Undoped N/A N/A N/A 1-100 GaAs （100） 50.8 8000±10 As cut >1E7 Undoped N/A N/A N/A 1-100 GaAs （100） 50.8 8000±10 DSP >1E7 Undoped N/A N/A N/A 1-100 GaAs (100)2° 50.8 3000 SSP >1E7 N/Si N/A N/A N/A 1-100 GaAs （100） 50.8 350±25 SSP >1E7 N/A (1-5)E19 N/A N/A 1-100 GaAs （100） 50.8 350±25 SSP N/A N/A (0.4-3.5)E18 ≥1400 ≤100 1-100 GaAs (100)0°or 2° 76.2 130±20 DSP N/A Undoped N/A N/A <10000 1-100 GaAs (100)2°±0.50 76.2 350±25 SSP N/A N/Si (0.4-2.5)E18 N/A ≤5000 1-100 GaAs （100） 76.2 350±25 SSP N/A N/A N/A N/A N/A 1-100 GaAs （100） 76.2 350±25 SSP >1E7 Undoped N/A N/A ≤8E4 or 1E4 1-100 GaAs （100） 76.2 625±25 DSP >1E7 Undoped N/A ≥4500 ≤8E4 or 1E4 1-100 GaAs (100)2°±0.10 off toward(110) 76.2 500 SSP >1E7 Undoped N/A N/A N/A 1-100 GaAs (100)2° 100 625 DSP >1E7 Undoped N/A N/A N/A 1-100 GaAs (100)2° 100 625±25 DSP N/A N/A N/A N/A N/A 1-100 GaAs (100)2°±0.50 off toward (011) 100 350±25 SSP N/A N/Si (0.4-3.5)E18 N/A ≤5000 1-100 GaAs (100)2°±0.10 off toward (110) 100 625±25 DSP (1-4)E18 Undoped N/A N/A N/A 1-100 GaAs (100)2°±0.50 off toward (011) 100 625±25 DSP (1.0-4.0)1E8 Undoped N/A N/A N/A 1-100 GaAs (100)2°±0.50 off toward (011) 100 625±25 DSP (1-4)E8 Undoped N/A N/A N/A 1-100 GaAs (100)2°±0.50 off toward (011) 100 350±25 SSP N/A N/Si (0.4-4)E18 N/A ≤5000 1-100 GaAs (100)15°±0.50 off toward (011) 100 350±25 SSP N/A N/Si (0.4-4)E18 N/A ≤5000 1-100 GaAs (100)2°±0.50 100 350±25 DSP N/A N/Si (0.4-4)E18 N/A ≤5000 1-100 GaAs (100)2°±0.50 100 625±25 SSP (1-4)E18 Undoped N/A N/A N/A 1-100 GaAs (100)2°±0.50 150 675±25 DSP >1E7 Undoped N/A N/A N/A 1-100 GaAs (100)0°±3.0° 150 675±25 DSP >1.0×107 Undoped N/A N/A N/A 1-100 GaAs （310） 50.8/76.2 N/A N/A N/A N/A N/A N/A N/A As a GaAs wafer supplier,we offer GaAs semiconductor list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.*** We offer GaAs epitaxy service by MBE and MOCVD, please contact with our sales team. GaSb Wafer Substrate - Gallium Antimonide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 ...
Ge Wafer Supplier Ge Wafer Substrate-Germanium Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 1-100 Ge （100） 50.8 500±25 SSP 0.0138-0.02 P/Ga -110 ≤5000 N/A 1-100 Ge （100） 50.8 500 SSP ≥30 N/undoped N/A N/A <5A 1-100 Ge （100） 50.8 500 SSP 58.4-63.4 N/undoped N/A N/A N/A 1-100 Ge （100） 50.8 500 SSP 0.1-1 P/Ga N/A N/A N/A 1-100 Ge （100） 50.8 500 SSP 0.1-0.05 P/Ga N/A N/A N/A 1-100 Ge （100） 50.8 1000 DSP >30 N/A -110 N/A N/A 1-100 Ge （100） 50.8 2000 SSP N/A N/A N/A N/A N/A 1-100 Ge （100） 50.8 4000 SSP N/A N/A N/A N/A N/A 1-100 Ge (111)/(110) 50.8 200000 N/A 5—20 N/A N/A N/A N/A 1-100 Ge （100） 50.8 400 SSP <0.4 N/A N/A N/A N/A 1-100 Ge (100)/(111) 50.8 4000±10 DSP N/A N/A N/A N/A N/A 1-100 Ge （100） 50.8 350 SSP 1—10 P/Ga -110 ≤5000 N/A 1-100 Ge （100） 50.8 500±25 SSP 2—10 P/Ga -110 ≤5000 N/A 1-100 Ge （100） 50.8 500±25 SSP 0.3-3 N/Sb -110 ≤5000 N/A 1-100 Ge （100） 50.8 500±25 SSP 0.3-3 P/Ga -110 ≤5000 N/A 1-100 Ge （111） 60 1000 As cut >30 N/A -110 <3000 N/A 1-100 Ge （100） 100 N/A SSP <0.019 P/Ga -110 <500 N/A 1-100 Ge （100） 100 1000±25 SSP ≥30 N/undoped N/A N/A N/A 1-100 Ge (100) off 6°or off 9° 100 500 SSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge （100） 100 500 SSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge （100） 100 500 DSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge （100） 100 500 SSP <0.01 P/Ga N/A N/A N/A 1-100 Ge （100） 100 500 DSP <0.01 P/Ga N/A N/A N/A 1-100 Ge （100） 100 500 SSP ≥35 P/Ga N/A N/A N/A 1-100 Ge （100） 100 500 DSP ≥35 P/Ga N/A N/A N/A 1-100 Ge （100） 100 500 SSP 0.1-0.05 P/Ga N/A N/A <5A 1-100 Ge （100） 100 500 DSP 0.1-0.05 P/Ga N/A N/A <5A 1-100 Ge (100)6°off (111) 100 185±15 DSP 0.01-0.05 N/A -110 ≤5000 <5A 1-100 Ge (100)6°off (110) 100 525±25 SSP 0.01-0.04 N/A N/A N/A N/A 1-100 Ge （100） 100 N/A N/A N/A N/A N/A N/A N/A 1-100 Ge （100） 100 1000±15 SSP ≥30 N/A -110 ≤5000 N/A 1-100 Ge （100） 100 750±25 SSP ≥30 N/A -110 ≤5000 N/A 1-100 Ge （100） 100 500±25 SSP 10—30 N/A N/A N/A N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 P/Ga N/A <500 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 P/Ga N/A <4000 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 N/Sb N/A <500 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 N/Sb N/A <4000 N/A 1-100 Ge (100)/(111) 100 190 DSP 0.05-0.1 P/Ga N/A <500 N/A 1-100 Ge (100)/(111) 100 190 DSP 0.05-0.1 P/Ga N/A <4000 N/A 1-100 Ge （111） 100 500±25 SSP <0.4 N/Sb N/A N/A N/A 1-100 Ge (100)6°off-cut toward(111)A 100 175±25 SSP 0.003-0.009 P/Ga (0-1-1) (0-11) <100 N/A 1-100 Ge (310)±0.1° 100 200±15 DSP >20 N/A N/A N/A N/A 1-100 Ge （111） 150 600-700 N/A >30 N/A -110 N/A N/A As a Ge wafer supplier,we offer germanium wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. *** ...
Indium Semiconductor Wafer InAs wafer Substrate- Indium Arsenide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 InAs （110） 40 500 SSP N/A P (1-9)E17 N/A N/A 1-100 InAs （100） 50.8 450 SSP N/A P 1E17/cc N/A < 20000 1-100 InAs （100） 50.8 400 SSP N/A N/S 5E18-2E19 >6,000 <1E4 1-100 InAs （100） 50.8 400 DSP N/A N/S 5E18-2E19 >6,000 <1E4 1-100 InAs (111)B 50.8 N/A SSP N/A N/S (1-3)E18 N/A N/A 1-100 InAs （100） 50.8 N/A SSP N/A N/Te 1E16/cc N/A N/A 1-100 InAs （100） 50.8 400 DSP N/A P (1-9)E18/cc N/A N/A 1-100 InAs （100） 3x3x5 N/A N/A N/A N/A 3E16/cc N/A N/A As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. InP Wafer Substrate- Indium Phosphide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 InP （111） 25.4 300 N/A N/A N/A <3E16 >3500 <3E4 1-100 InP （100） 50.8 400±10 SSP NA N/ (5-50)E15 NA < 20000 1-100 InP （111） 50.8 400±10 SSP NA P/Zn ~1E19 NA < 20000 1-100 InP （100） 50.8 400 SSP NA N/ ~5E17 NA NA 1-100 InP (111)A 50.8 N/A N/A N/A P/Zn ~5E18 NA NA 1-100 InP (111)±0.5° 50.8 350 SSP >1E7 Undoped (1-10)E7 >2000 <3E4 1-100 InP (100)/(111) 50.8 350-400 SSP NA N (1-3)E18 NA NA 1-100 InP （111） 50.8 500±25 SSP NA Undoped NA NA NA 1-100 InP (111)A 50.8 500 SSP >1E7 Undoped N/A N/A N/A 1-100 InP (111)A 50.8 500±25 SSP NA Undoped NA NA NA 1-100 InP (111)B 50.8 500±25 SSP NA Undoped NA NA NA 1-100 InP （110） 50.8 400±25 SSP N/A P/Zn N/S NA NA NA 1-100 InP （110） 50.8 400±25 DSP N/A P/Zn N/S NA NA NA 1-100 InP (110)±0.5 50.8 400±25 SSP N/A N/A N/A N/A N/A 1-100 InP (100)±0.5 50.8 350±25 SSP N/A p/zn N/A N/A N/A 1-100 InP N/A 50.8 500 N/A N/A N/A N/A N/A N/A 1-100 InP (111)B 50.8 400±25 N/A >1E4 N/Te NA NA NA 1-100 InP (211)B 50.8 400±25 N/A >1E4 N/Te NA NA NA 1-100 InP (311)B 50.8 400±25 N/A >1E4 N/Te NA NA NA 1-100 InP （111） 50.8 N/A SSP N/A N (1-9)E18 NA NA 1-100 InP N/A 50.8 4000±300 N/A N/A N/A undoped N/A N/A 1-100 InP （100） 50.8 500±25 SSP N/A N/s (1-9)E18 N/A N/A 1-100 InP （100） 50.8 500±25 SSP N/A N/s ~3E17 N/A N/A 1-100 InP (100)/(111) 76.2 600 SSP NA N (1-3)E18 NA NA 1-100 InP (100)±0.5 76.2 600±25 SSP NA Undoped <3E16 >3500 <3E4 1-100 InP （100） 76.2 400-600 DSP NA Undoped/Fe NA NA NA 1-100 InP （100） 76.2 600±25 SSP NA N/A N/S N/A N/A 1-100 InP （100） 76.2 600±25 SSP NA N/A N/A N/A N/A 1-100 InP （100） 76.2 675±25 DSP NA N/A (3-6)E18 N/A N/A 1-100 InP （100） 76.2 600±25 DSP NA N/A 2.00E+18 e N/A 1-100 InP （100） 76.2 600±25 DSP NA N/A N/A N/A N/A 1-100 InP （111） 10x10 500±25 SSP NA Undoped N/A N/A N/A 1-100 InP N/A 30-40 N/A N/A N/A N/A N/A N/A N/A 1-10...
CZT Semiconductor Wafer CdZnTe Wafer Substrate-Cadmium Zinc Telluride Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant FWHM PCS (mm) (μm) Ω·cm 1-100 CdZnTe N/A 10x10 1000 DSP >1E10 N @59.5keV<7% 1-100 CdZnTe N/A 10x10 2000 DSP >1E10 N @59.5keV<7% 1-100 CdZnTe -111 10x10 500 SSP N/A P N/A 1-100 CdZnTe (211)B 10X10 800 DSP N/A N/A N/A 1-100 CdZnTe N/A 10X10 500 lapping N/A N/A N/A 1-100 CdZnTe N/A 10X10 500 DSP N/A N/A N/A 1-100 CdZnTe N/A 20X20 800 DSP N/A N/A N/A 1-100 CdZnTe N/A 20x20 5000 DSP N/A N/A N/A 1-100 CdZnTe N/A 20x20 2000 DSP N/A N/A N/A 1-100 CdZnTe N/A 20x20 3000 DSP N/A N/A N/A 1-100 CdZnTe N/A 3X3 2000 DSP N/A N/A N/A As a CZT semiconductor wafer supplier,we offer CZT semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
Other Wafers MgO Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 MgO (100) 50.8 500 SSP N/A N/A N/A N/A <0.5 1-100 MgO (111) 10x10 500 SSP N/A N/A N/A N/A <0.5 1-100 MgO (111) 10x10 1000 SSP N/A N/A N/A N/A <0.5 1-100 MgO (100) 10x10 1000 SSP N/A N/A N/A N/A <0.5 1-100 MgO (100) 10x10 500 SSP N/A N/A N/A N/A <0.5 1-100 MgO (100) 10x10 500 DSP N/A N/A N/A N/A <0.5 As a MgO semiconductor wafer supplier,we offer MgO semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. STO Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 STO (100) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 STO (110) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 STO (111) 10X10 500 SSP N/A N/A N/A N/A <0.5 As a STO wafer supplier,we offer STO wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
