PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.
MOQ :
1(GaAs) Gallium Arsenide Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.
(GaAs)Gallium Arsenide Wafers for LED Applications
|
Item |
Specifications |
Remarks |
|
Conduction Type |
SC/n-type |
SC/p-type with Zn dope Available |
|
Growth Method |
VGF |
|
|
Dopant |
Silicon |
Zn available |
|
Wafer Diamter |
2, 3 & 4 inch |
Ingot or as-cut availalbe |
|
Crystal Orientation |
(100)20/60/150 off (110) |
Other misorientation available |
|
OF |
EJ or US |
|
|
Carrier Concentration |
(0.4~2.5)E18/cm3 |
|
|
Resistivity at RT |
(1.5~9)E-3 Ohm.cm |
|
|
Mobility |
1500~3000cm2/V.sec |
|
|
Etch Pit Density |
<5000/cm2 |
|
|
Laser Marking |
upon request |
|
|
Surface Finish |
P/E or P/P |
|
|
Thickness |
220~450um |
|
|
Epitaxy Ready |
Yes |
|
|
Package |
Single wafer container or cassette |
|
(GaAs)Gallium Arsenide Wafers for LD Applications
|
Item |
Specifications |
Remarks |
|
Conduction Type |
SC/n-type |
|
|
Growth Method |
VGF |
|
|
Dopant |
Silicon |
|
|
Wafer Diamter |
2, 3 & 4 inch |
Ingot or as-cut available |
|
Crystal Orientation |
(100)20/60/150 off (110) |
Other misorientation available |
|
OF |
EJ or US |
|
|
Carrier Concentration |
(0.4~2.5)E18/cm3 |
|
|
Resistivity at RT |
(1.5~9)E-3 Ohm.cm |
|
|
Mobility |
1500~3000 cm2/V.sec |
|
|
Etch Pit Density |
<500/cm2 |
|
|
Laser Marking |
upon request |
|
|
Surface Finish |
P/E or P/P |
|
|
Thickness |
220~350um |
|
|
Epitaxy Ready |
Yes |
|
|
Package |
Single wafer container or cassette |
|
(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
|
Item |
Specifications |
Remarks |
|
Conduction Type |
Insulating |
|
|
Growth Method |
VGF |
|
|
Dopant |
Undoped |
|
|
Wafer Diamter |
2, 3 & 4 inch |
Ingot available |
|
Crystal Orientation |
(100)+/- 0.50 |
|
|
OF |
EJ, US or notch |
|
|
Carrier Concentration |
n/a |
|
|
Resistivity at RT |
>1E7 Ohm.cm |
|
|
Mobility |
>5000 cm2/V.sec |
|
|
Etch Pit Density |
<8000 /cm2 |
|
|
Laser Marking |
upon request |
|
|
Surface Finish |
P/P |
|
|
Thickness |
350~675um |
|
|
Epitaxy Ready |
Yes |
|
|
Package |
Single wafer container or cassette |
|
6" (GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
|
Item |
Specifications |
Remarks |
|
Conduction Type |
Semi-insulating |
|
|
Grow Method |
VGF |
|
|
Dopant |
Undoped |
|
|
Type |
N |
|
|
Diamater(mm) |
150±0.25 |
|
|
Orientation |
(100)00±3.00 |
|
|
NOTCH Orientation |
〔010〕±20 |
|
|
NOTCH Deepth(mm) |
(1-1.25)mm 890-950 |
|
|
Carrier Concentration |
N/A |
|
|
Resistivity(ohm.cm) |
＞1.0×107 or 0.8-9 x10-3 |
|
|
Mobility(cm2/v.s) |
N/A |
|
|
Dislocation |
N/A |
|
|
Thickness(µm) |
675±25 |
|
|
Edge Exclusion for Bow and Warp(mm) |
N/A |
|
|
Bow(µm) |
N/A |
|
|
Warp(µm) |
≤20.0 |
|
|
TTV(µm) |
≤10.0 |
|
|
TIR(µm) |
≤10.0 |
|
|
LFPD(µm) |
N/A |
|
|
Polishing |
P/P Epi-Ready |
|
2" LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications
|
Item |
Specifications |
Remarks |
|
Diamater(mm) |
Ф 50.8mm ± 1mm |
|
|
Thickness |
1-2um or 2-3um |
|
|
Marco Defect Density |
≤ 5 cm-2 |
|
|
Resistivity(300K) |
>108 Ohm-cm |
|
|
Carrier |
＜0.5ps |
|
|
Dislocation Density |
<1x106cm-2 |
|
|
Useable Surface Area |
≥80% |
|
|
Polishing |
Single side polished |
|
|
Substrate |
GaAs Substrate |
|
* We also can provide poly crystal GaAs bar, 99.9999%(6N).
Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!
We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.
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Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
