The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, to reduce the costs. There are the low-roughness, low-reflectivity and high-reflectivity etching wafers.
Etching wafer
The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, to reduce the costs. There are the low-roughness, low-reflectivity and high-reflectivity etching wafers.
Our advantages at a glance
1.Advanced epitaxy growth equipment and test equipment.
2.Offer the highest quality with low defect density and good surface roughness.
3.Strong research team support and technology support for our customers
FZ etching wafers Specifications
|
Type |
Conduction type |
Orientation |
Diameter scope(mm) |
Resistivity scope(Ω cm) |
Geometric parameter,graininess,surface metal |
|
FZ |
N&P |
<100>&<111> |
76.2-200 |
>1000 |
T≥180（um）TTV≤2（um）TIR≤2（um）the maximum reflectivity could be 90% |
|
NTDFZ |
N |
<100>&<111> |
76.2-200 |
30-800 |
|
|
CFZ |
N&P |
<100>&<111> |
76.2-200 |
1-50 |
|
|
GDFZ |
N&P |
<100>&<111> |
76.2-200 |
0.001-300 |
CZ etching wafers Specifications
|
Type |
Conduction type |
Orientation |
Diameter scope(mm) |
Resistivity scope(Ω cm) |
Geometric parameter,graininess,surface metal |
|
MCZ |
N&P |
<100> <110>&<111> |
76.2-200 |
1-300 |
T≥180（um）TTV≤2（um）TIR≤2（um）the maximum reflectivity could be 90% |
|
CZ |
N&P |
<100> <110>&<111> |
76.2-200 |
1-300 |
|
|
MCZ heavily doped |
N&P |
<100> <110>&<111> |
76.2-200 |
0.001-1 |
FZ-Silicon The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce 1
PAM-XIAMEN Offers Dummy Wafer / Test Wafer / Monitor Wafer
CZ-Silicon The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.
Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epit1
FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1
Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
