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Freestanding GaN substrate
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.Hot Tags : GaN Substrate semiconductor wafer fabrication Freestanding GaN Substrate Gan on Si Gallium Nitride Led Gallium Nitride Properties
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SiC Substrate
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.Hot Tags : 4H SiC 6H SiC SiC Wafer Silicon Carbide Wafer Silicon Carbide Substrate Sic Wafer Price
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SiC Epitaxy
We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.Hot Tags : SiC Epitaxy Epitaxy Deposition Epitaxy Wafer Silicon Carbide Sic Diode
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SIC Application
Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.Hot Tags : SiC Application Wafer Chip Wafer Etch Silicon Carbide Properties Silicon Carbide Mosfet
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GaAs (Gallium Arsenide) Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.Hot Tags : Gaas Wafer Gaas Substrate Gallium Arsenide Wafer Gallium Arsenide Substrate Gallium Arsenide Led Gaas Wafer Price
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Ge(Germanium) Single Crystals and Wafers
PAM offers semiconductor materials,single crystal (Ge)Germanium Wafer grown by VGF / LECHot Tags : Germanium Substrate Germanium Wafer Ge Wafer Germanium Wafer Price Germanium Thin Film Deposition
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CdZnTe (CZT) Wafer
Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate,X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.Hot Tags : CdZnTe CZT Detector Gamma Ray Detectors CdTe CZT Radiation Detector CdZnTe Substrate
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Float-zone mono-crystalline silicon
FZ-Silicon The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.Hot Tags : Float Zone FZ Silicon Float Zone Process Silicon Ingot Silica Wafer Silicon Ingot Manufacturers
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