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SiC Substrate
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.Hot Tags : 4H SiC 6H SiC SiC Wafer Silicon Carbide Wafer Silicon Carbide Substrate Sic Wafer Price
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GaN based LED Epitaxial Wafer
PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.Hot Tags : Led Wafer Led Epitaxial Wafer Led Wafer Manufacturers semiconductor wafer fabrication InGan Led InGan Laser
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SiC Epitaxy
We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.Hot Tags : SiC Epitaxy Epitaxy Deposition Epitaxy Wafer Silicon Carbide Sic Diode
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SIC Application
Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.Hot Tags : SiC Application Wafer Chip Wafer Etch Silicon Carbide Properties Silicon Carbide Mosfet
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Float-zone mono-crystalline silicon
FZ-Silicon The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.Hot Tags : Float Zone FZ Silicon Float Zone Process Silicon Ingot Silica Wafer Silicon Ingot Manufacturers
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Test Wafer Monitor Wafer Dummy Wafer
PAM-XIAMEN Offers Dummy Wafer / Test Wafer / Monitor WaferHot Tags : Test Wafer Monitor Wafer Dummy Wafer Silicon Substrate Silicon Wafer Thickness
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Cz mono-crystalline silicon
CZ-Silicon The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.Hot Tags : Silicon Wafer Price Wafers Chips SOI Wafer Silicon Wafers for Sale Wafer Price
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Epitaxial Silicon Wafer
Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)Hot Tags : Epi Silicon Wafer Epitaxial Silicon Wafer Epitaxial Wafer Manufacturers Epi Wafer Manufacturer Silicon on Insulator
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