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GaN Templates
PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.Hot Tags : GaN Templates Gan on Sic HVPE GaN semiconductor wafer fabrication AlGan Gan on Sapphire
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SiC Substrate
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.Hot Tags : 4H SiC 6H SiC SiC Wafer Silicon Carbide Wafer Silicon Carbide Substrate Sic Wafer Price
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SiC Epitaxy
We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.Hot Tags : SiC Epitaxy Epitaxy Deposition Epitaxy Wafer Silicon Carbide Sic Diode
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SIC Application
Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.Hot Tags : SiC Application Wafer Chip Wafer Etch Silicon Carbide Properties Silicon Carbide Mosfet
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GaAs Epiwafer
We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.Hot Tags : Gaas Epi Wafer Epi Wafer Epitaxial Wafer Epitaxial Growth Epitaxial Film
Contact Information
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