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GaN Templates
PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.Hot Tags : GaN Templates Gan on Sic HVPE GaN semiconductor wafer fabrication AlGan Gan on Sapphire
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Freestanding GaN substrate
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.Hot Tags : GaN Substrate Freestanding GaN Substrate Gan on Si Gallium Nitride Led Gallium Nitride Properties
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SiC Substrate
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.Hot Tags : 4H SiC 6H SiC SiC Wafer Silicon Carbide Wafer Silicon Carbide Substrate Sic Wafer Price
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GaN based LED Epitaxial Wafer
PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.Hot Tags : Led Wafer Led Epitaxial Wafer Led Wafer Manufacturers InGan Led InGan Laser
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GaN HEMT epitaxial wafer
Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.Hot Tags : GaN HEMT Epitaxial Wafer AlGaN/GaN HEMT Gan Hemt Gan Devices
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SiC Epitaxy
We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.Hot Tags : SiC Epitaxy Epitaxy Deposition Epitaxy Wafer Silicon Carbide Sic Diode
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SIC Application
Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.Hot Tags : SiC Application Wafer Chip Wafer Etch Silicon Carbide Properties Silicon Carbide Mosfet
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Ge(Germanium) Single Crystals and Wafers
PAM offers semiconductor materials,single crystal (Ge)Germanium Wafer grown by VGF / LECHot Tags : Germanium Substrate Germanium Wafer Ge Wafer Germanium Wafer Price Germanium Thin Film Deposition
Contact Information
+86-592-5601 404