We can offer 4"GaAs mHEMT epi wafer(GaAs MBE epiwafer), please see below typical structure: N+ In0.53Ga0.47As 20nm (n=1x10^19 cm^-3) N+ InP etch stopper 5nm (n=5x10^18 cm^-3) i- In0.52Al0.48As Schottky barrier 10nm Si-delta-doping (n=6x10^12 cm^-2) i- In0.52Al0.48As spacer 4nm i-In0.53Ga0.47As channel 15nm In0.52Al0.48As buffer 300nm metamorphic buffer 300nm (linearly graded from substrate to In0.53Ga0.47As) S.I. GaAs substrate Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
We can offer 4"GaAs HEMT epi wafer, please see below typical structure: 1) 4" SI substrate GaAs with [100] orientation, 2) [buffer] superlattice of Al(0.3)Ga(0.7)As/GaAs with thicknesses10/3 nm, repeat 170 times, 3) barrier Al(0.3)Ga(0.7)As 400 nm, 4) quantum well GaAs 20 nm, 5) spacer Al(0.3)Ga(0.7)As 15 nm, 6) delta-doping with Si to create electron density 5-6*10^11 cm^(-2), 7) barrier Al(0.3)Ga(0.7)As 180 nm, 8) cap layer GaAs 15nm. Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
AlGaInP LED Chip Sepcification Orange LED Wafer Substrate: P+GaAs p-GaP p-AlGaInP MQW n-AlGaInP DBR n-ALGaAs/AlAs Buffer GaAs substrate ·Chip Sepcification (Base on 7mil*7mil chips) Parameter Chip Size 7mil(±1mil)*7mil(±1mil) Thickness 7mil(±1mil) P Electrode U/L N Electrode AU Structure Such as right-shown ·Optical-elctric characters Parameter Condition Min. Typ Max. Unit Forward voltage If=10μA 1.35 ┄ ┄ V Reverse voltage If=20mA ┄ ┄ 2.2 V Reverse current V=10V ┄ ┄ 2 μm Wavelength If=20mA 565 ┄ 575 nm Half wave width If=20mA ┄ 10 ┄ nm ·Light intensity characters Brightness code LA LB LC LD LE LF LG LH IV(mcd) 10—15 15-20 20-25 25-30 30-35 35-40 40-50 50-60 Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers. AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure. Specs of AlGaInP wafers on chips AlGaInP LED Wafer for chip Item No.:PAM-CAYG1101 Dimensions: Growth Technique – MOCVD Substrate Material: Gallium arsenide Substrate Conduction: n type Diameter:2" ●Chip Dimensions: 1)Chip size:front size:8mil(±1mil)×8mil(±1mil) back side:9mil(±1mil)×9mil(±1mil) 2)Chip thickness:7mil(±1mil) 3)Pad size:4mil(±0.5mil) 4)Structure:see 1-1 ●Photoelectric Properties Parameter Condition Min. Typ. Max. Unit Forward Voltage（Vf1） If=10μA 1.35 ﹎ ﹎ V Forward Voltage（Vf2） If=20mA ﹎ ﹎ 2.2 V Reverse Voltage（Lr） Vr=10V ﹎ ﹎ 2 μA Dominant wavelength（λｄ） If=20mA 565 ﹎ 575 nm FWHM（Δλ） If=20mA ﹎ 10 ﹎ nm ●Luminous Intensity: Code LC LD LE LF LG LH LI IV(mcd) 20-30 25-35 30-35 35-50 40-60 50-70 60-80 Band gap of strained AlGaInP on GaAs substrate In this tutorial we want to study the band gaps of strained AlxGayIn1-x-yP on a GaAs substrate. The material parameters are taken from Band parameters for III-V compound semiconductors and their alloys I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan J. Appl. Phys. 89 (11), 5815 (2001) To understand the effect of strain on the band gap on the individual components of this quaternary, we first examine the effects on 1)AlP strained tensilely with respect to GaAs 2)GaP strained tensilely with respect to GaAs 3)InP strained compressively with respect to GaAs 4)AlxGa1-xP strained tensilely with respect to GaAs 5)GaxIn1-xP strained with respect to GaAs 6)AlxIn1-xP strained with respect to GaAs 7)Al0.4Ga0.6P strained tensilely with respect to GaAs 8)Ga0.4In0.6P strained compressively with respect to GaAs 9)Al0.4In0.6P strained compressively with respect to GaAs Each material layer has a length of 10 nm in the simulation. The material layers 4), 5) and 6) vary its alloy contents linearly: 4)AlxGa1-xP from 10 nm to 20 nm from x=0.0 to x=1.0 5)GaxIn1-xP from 30 nm to 40 nm from x=0.0 to x=1.0 6)AlxIn1-xP from 50 nm to 60 nm from x=1.0 to x=0.0 Refractive index of AlGaInP Source: PAM-XIAMEN For more information, please visit our website: www.semiconductorwafers.net, send us email at luna@powerwaywafer.com or powerwaymaterial@gmail.com.
We can offer 2" GaAs/AlGaAs/GaAs epi wafer, please see below typical structure: S.No Parameters Specifications 1 GaAs substrate layer thickness 500μm 2 layer thickness 2μm 3 GaAs top layer thickness 220 nm 4 Mole fraction of Al (x) 0.7 5 Doping level Intrinsic Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
We can offer 2" AlInP/GaAs epi wafer as follows: 2” AlInP epi layer: epi layer:1-3um, GaAs substrate:2”size,orientation (100) or (110), n type or semi-insulating, thickness:300-500um, single side polished. Example QE measurement of a triple-junction solar cell: Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
We can offer 2" GaInP/InP epi wafer as follows: 2” GaInP epi layer: thickness:1um, Ga:In=1:1, epi layer:1-3um, InP substrate:2”size,orientation (100) or (110), n type or semi-insulating, thickness:300-500um, single side polished. Gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It is used mainly in HEMT structure,HBT structures or MESFET structure, a high-bandgap GaInP epitaxial material grown on InP to increase the Schottky barrier height of the InP MESFET with the Schottky gate materials( Au and Pt2Si): The pseudomorphic GaInP/InP MESFET with an Au gate has a Schottky barrier height of 0.54 eV, and the reverse leakage current of the device is 10 -2 times lower than that of the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET are 66.7 and 104.2 mS/mm respectively for the 5-μm-gate-length GaInP/InP MESFET GaInP is also used for the fabrication of high efficiency solar cells used for space applications. Ga0.5In0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown on GaAs. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space=1.35 kW/m2) efficiencies in excess of 25%. A different alloy of GaInP, lattice matched to the underlying GaInAs, is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency. Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more cost effective. They are used in space applications. And now we offer a epi wafer structure as follows Layer Material Mole Fraction (x) Mole Fraction (y) Thickness (um) Type CV Level (cm-3) 15 GaIn(x)As 0.016 0.2 N >5.00e18 14 Al(x)InP 0.04 N 5.00E+17 13 GaIn(x)P 0.1 N 2.00E+18 12 GaIn(x)P 0.5 P 11 AlIn(x)P 0.1 P 10 Al(x)GaAs 0.015 P 9 GaAs 0.015 N 8 GaIn(x)P 0.554 0.1 N 7 GaIn(x)As 0.016 0.1 N 6 GaIn(x)As 0.016 3 P 1-2e17 5 GaIn(x)P 0.554 0.1 P 1-2e18 4 Al(x)GaAs 0.4 0.03 P 5.00E+19 3 GaAs 0.03 N 2.00E+19 2 GaIn(x)As 0.016 0.5 N 2.00E+18 1 GaIn(x)P 0.554 0.06 N We also offer epi wafers of single-junction and dual-junction InGaP/GaAs solar cells,with different structures of epitaxial layers (AlGaAs,InGaP) grown on GaAs for solar cell application, please click AlGaP/GaAs Epi Wafer for Solar Cell Source: semiconductorwafers.net For more information, please visit our website: www.semiconductorwafers.net, send us email at luna@powerwaywafer.com or powerwaymaterial@gmail.com.
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