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Freestanding GaN substrate
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.Hot Tags : GaN Substrate semiconductor wafer fabrication Freestanding GaN Substrate Gan on Si Gallium Nitride Led Gallium Nitride Properties
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GaN based LED Epitaxial Wafer
PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.Hot Tags : Led Wafer Led Epitaxial Wafer Led Wafer Manufacturers InGan Led InGan Laser
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GaAs (Gallium Arsenide) Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.Hot Tags : Gaas Wafer Gaas Substrate Gallium Arsenide Wafer Gallium Arsenide Substrate Gallium Arsenide Led Gaas Wafer Price
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