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Freestanding GaN substrate
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.Hot Tags : GaN Substrate semiconductor wafer fabrication Freestanding GaN Substrate Gan on Si Gallium Nitride Led Gallium Nitride Properties
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GaN Templates
PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.Hot Tags : GaN Templates Gan on Sic HVPE GaN AlGan Gan on Sapphire
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GaN based LED Epitaxial Wafer
PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.Hot Tags : Led Wafer Led Epitaxial Wafer Led Wafer Manufacturers InGan Led InGan Laser
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GaN HEMT epitaxial wafer
Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.Hot Tags : GaN HEMT Epitaxial Wafer AlGaN/GaN HEMT Gan Hemt Gan Devices
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