In the last decade, the III-N compounds have attracted much interest because of their applications in blue, violet and ultraviolet optoelectronics. Most of the devices and research use sapphire as a substrate for epitaxy of nitrides. However, these epi-structures contain a very high dislocation density induced by the 16% lattice mismatch between GaN and sapphire. In our laboratory, we grow single ...
PAM-XIAMEN grows high quality Gallium Antimonide (GaSb) single crystal ingots. We also round, saw cut, lap and polish GaSb wafers and can supply an epi-ready surface quality. GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect...
In this paper we review the developments of producing non-polar (i.e. m-plane and a-plane) and semi-polar (i.e. (20.1)-plane) wafers by ammonothermal method. The growth method and polishing results are described. We succeeded in producing 26 mm × 26 mm non- and semi-polar wafers. These wafers possess outstanding structural and optical properties, with threading dislocation density of the order of ...
We investigated the transition energy levels of the vacancy defects in gallium nitride by means of a hybrid density functional theory approach (DFT). We show that, in contrast to predictions from a recent study on the level of purely local DFT, the inclusion of screened exchange stabilizes the triply positive charge state of the nitrogen vacancy for Fermi energies close to the valence band. On the...
A micromachined AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with diamondlike carbon/titanium (DLC/Ti) heat-dissipation layers was investigated. Superior thermal conductivity and thermal expansion coefficient similar to that of GaN enabled DLC/Ti to efficiently dissipate the heat of the GaN power HEMT through the Si substrate via holes. This HEMT with DLC design also mainta...
The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits th...
The process to decrease the dislocation density in 3-inch Fe-doped InP wafers is described. The crystal growth process is a conventional liquid encapsulated Czochralsky (LEC) but thermal shields have been added in order to decrease the thermal gradient in the growing crystal. The shape of these shields has been optimized with the help of numerical simulations of heat transfer and thermomechanical ...
InAs segments were grown on top of GaAs islands, initially created by droplet epitaxy on silicon substrate. We systematically explored the growth-parameter space for the deposition of InAs, identifying the conditions for the selective growth on GaAs and for purely axial growth. The axial InAs segments were formed with their sidewalls rotated by 30$^{{}^\circ }$ compared to the GaAs base islands un...
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