A graphite capping layer has been evaluated to protect the surface of patterned and selectively implanted 4H–SiC epitaxial wafers during post-implantation annealing. AZ-5214E photoresist was spun and baked in vacuum at temperatures ranging from 750 to 850 °C to form a continuous coating on both planar and mesa-etched SiC surfaces with features up to 2 µm in height. Complete conversion of the hydro...
PAM-XIAMEN grows high quality Gallium Antimonide (GaSb) single crystal ingots. We also round, saw cut, lap and polish GaSb wafers and can supply an epi-ready surface quality. GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect...
Wafer-scale arrays of well-ordered Pb(Zr0.2Ti0.8)O3 nanodiscs and nanorings were fabricated on the entire area (10 mm × 10 mm) of the SrRuO3 bottom electrode on an SrTiO3 single-crystal substrate using the laser interference lithography (LIL) process combined with pulsed laser deposition. The shape and size of the nanostructures were controlled by the amount of PZT deposited through the patterned ...
We present a novel process for integrating germanium with silicon-on-insulator (SOI) wafers. Germanium is implanted into SOI which is then oxidized, trapping the germanium between the two oxide layers (the grown oxide and the buried oxide). With careful control of the implantation and oxidation conditions this process creates a thin layer (current experiments indicate up to 20-30nm) of almost pure...
We investigated the transition energy levels of the vacancy defects in gallium nitride by means of a hybrid density functional theory approach (DFT). We show that, in contrast to predictions from a recent study on the level of purely local DFT, the inclusion of screened exchange stabilizes the triply positive charge state of the nitrogen vacancy for Fermi energies close to the valence band. On the...
We report the generation of microdischarges in devices composed of microcrystalline diamond. Discharges were generated in device structures with microhollow cathode discharge geometries. One structure consisted of an insulating diamond wafer coated with boron-doped diamond layers on both sides. A second structure consisted of an insulating diamond wafer coated with metal layers on both sides. In e...
We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111)B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nea...
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and their advantages and disadvantages are explored. The basic idea and the theoretical background for a new method of the synthesis of epitaxial SiC films on Si are given. It will be shown that the new method is significantly different from the cl...
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