PAM-XIAMEN grows high quality Gallium Antimonide (GaSb) single crystal ingots. We also round, saw cut, lap and polish GaSb wafers and can supply an epi-ready surface quality. GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect...
We investigated the transition energy levels of the vacancy defects in gallium nitride by means of a hybrid density functional theory approach (DFT). We show that, in contrast to predictions from a recent study on the level of purely local DFT, the inclusion of screened exchange stabilizes the triply positive charge state of the nitrogen vacancy for Fermi energies close to the valence band. On the...
Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. The poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of op...
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and their advantages and disadvantages are explored. The basic idea and the theoretical background for a new method of the synthesis of epitaxial SiC films on Si are given. It will be shown that the new method is significantly different from the cl...
It is still a great challenge for semiconductor based-devices to obtain a large magnetoresistance (MR) effect under a low magnetic field at room temperature. In this paper, the photoinduced MR effects under different intensities of illumination at room temperature are investigated in a semi-insulating gallium arsenide (SI-GaAs)-based Ag/SI–GaAs/Ag device. The device is subjected to the irradiation...
The process to decrease the dislocation density in 3-inch Fe-doped InP wafers is described. The crystal growth process is a conventional liquid encapsulated Czochralsky (LEC) but thermal shields have been added in order to decrease the thermal gradient in the growing crystal. The shape of these shields has been optimized with the help of numerical simulations of heat transfer and thermomechanical ...
The density and light-scattering intensity of oxygen precipitates in CZ silicon crystals are measured by IR light-scattering tomography. The numerical data clarified through the measurements are discussed in relation to the amount of precipitated oxygen. The results obtained here correspond well with the theoretical analysis that oxygen precipitates cause light to scatter. The information obtained...
To realize high-performance silicon carbide (SiC) power devices, low-resistance ohmic contacts to p-type SiC must be developed. To reduce the ohmic contact resistance, reduction of the barrier height at metal/SiC interfaces or increase in the doping concentration in the SiC substrates is needed. Since the reduction of barrier height is extremely difficult, the increase in the Al doping concentrati...
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