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InGaN SiC wafer 4H–SiC epitaxial wafer GaN epitaxy GaN substrate epitaxial wafers gasb substrate 레이저 다이오드 에피 택셜 구조 germanium wafer gallium nitride

  • Direct-bonded four-junction GaAs solar cells*

    2018-Jun-19

    Direct wafer bonding technology is able to integrate two smooth wafers and thus can be used in fabricating III–V multijunction solar cells with lattice mismatch. In order to monolithically interconnect between the GaInP/GaAs and InGaAsP/InGaAs subcells, the bonded GaAs/InP heterojunction must be a highly conductive ohmic junction or a tunnel junction. Three types of bonding interfaces were designe...

    GaInP on GaAs GaAs InP
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