We have improved the efficiency of photoconductive antennas (PCAs) using low-temperature-grown GaAs (LT-GaAs). We found that the physical properties of LT-GaAs photoconductive layers greatly affect the generation and detection characteristics of terahertz (THz) waves. In THz generation, high photoexcited carrier mobility and the presence of a few As clusters in the LT-GaAs are two important factor...
A contactless non-destructive imaging method for spatially resolved dopant concentration, [2.2] N d, and electrical resistivity, ρ, of n- and p-type silicon wafers using lock-in carrierography images at various laser irradiation intensities is presented. Amplitude and phase information from wafer sites with known resistivity was employed to derive a calibration factor for accurate determination of...
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and their advantages and disadvantages are explored. The basic idea and the theoretical background for a new method of the synthesis of epitaxial SiC films on Si are given. It will be shown that the new method is significantly different from the cl...
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