It is still a great challenge for semiconductor based-devices to obtain a large magnetoresistance (MR) effect under a low magnetic field at room temperature. In this paper, the photoinduced MR effects under different intensities of illumination at room temperature are investigated in a semi-insulating gallium arsenide (SI-GaAs)-based Ag/SI–GaAs/Ag device. The device is subjected to the irradiation...
Ion beam irradiation has been examined as a method for creating nanoscale semiconductor pillar and cone structures, but has the drawback of inaccurate nanostructure placement. We report on a method for creating and templating nanoscale InAs spikes by focused ion beam (FIB) irradiation of both homoepitaxial InAs films and heteroepitaxial InAs on InP substrates. These 'nanospikes' are created as In ...
We present a non-contact method for the determination of the thermal response time of temperature sensors embedded in wafers. In this method, a flash lamp illuminates a spot on the wafer in periodic pulses; the spot is on the opposite side from the sensor under test. The thermal time constant of the sensor is then obtained from measurement of its temporal response, together with a theoretical mode...
Orthogonal experiments of GaSb films growth on GaAs substrate have been designed and performed by using a low-pressure metal–organic chemical vapor deposition (LP-MOCVD) system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized GaSb thin film has a narrow full width at half maxi...
A contactless non-destructive imaging method for spatially resolved dopant concentration, [2.2] N d, and electrical resistivity, ρ, of n- and p-type silicon wafers using lock-in carrierography images at various laser irradiation intensities is presented. Amplitude and phase information from wafer sites with known resistivity was employed to derive a calibration factor for accurate determination of...
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and their advantages and disadvantages are explored. The basic idea and the theoretical background for a new method of the synthesis of epitaxial SiC films on Si are given. It will be shown that the new method is significantly different from the cl...
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