X-ray topographic and chemical etching examination of Si:Ge single crystals containing 1.2 at% and 3.0 at% Ge, together with precise lattice parameter measurements, was performed. Diffraction contrasts in the form of concentric `quasi-circles' (striations), probably due to the non-uniform distribution of Ge atoms, were observed in projection topographs. The etching patterns reveale...
We present a non-contact method for the determination of the thermal response time of temperature sensors embedded in wafers. In this method, a flash lamp illuminates a spot on the wafer in periodic pulses; the spot is on the opposite side from the sensor under test. The thermal time constant of the sensor is then obtained from measurement of its temporal response, together with a theoretical mode...
Using plasma enhanced chemical vapor deposition (PECVD) at 13.56 MHz, a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium (μc-Si1−xGex:H) i-layer. The effects of seeding processes on the growth of μc-Si1−xGex:H i-layers and the performance of μc-Si1−xGex:H p—i—n single junction solar cells are investigated. By applying this seeding method, ...
Orthogonal experiments of GaSb films growth on GaAs substrate have been designed and performed by using a low-pressure metal–organic chemical vapor deposition (LP-MOCVD) system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized GaSb thin film has a narrow full width at half maxi...
For homogeneous materials, the ultrasonic immersion method, associated with a numerical optimization process mostly based on Newton's algorithm, allows the determination of elastic constants for various synthetic and natural composite materials. Nevertheless, a principal limitation of the existing optimization procedure occurs when the considered material is at the limit of the homogeneous hypothe...
The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP substrate or Si substrate were successfully obtained. We have fabricated the InP substrate or Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP or InP double heterostructure layers on this I...
A contactless non-destructive imaging method for spatially resolved dopant concentration, [2.2] N d, and electrical resistivity, ρ, of n- and p-type silicon wafers using lock-in carrierography images at various laser irradiation intensities is presented. Amplitude and phase information from wafer sites with known resistivity was employed to derive a calibration factor for accurate determination of...
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