In the last decade, the III-N compounds have attracted much interest because of their applications in blue, violet and ultraviolet optoelectronics. Most of the devices and research use sapphire as a substrate for epitaxy of nitrides. However, these epi-structures contain a very high dislocation density induced by the 16% lattice mismatch between GaN and sapphire. In our laboratory, we grow single ...
PAM-XIAMEN grows high quality Gallium Antimonide (GaSb) single crystal ingots. We also round, saw cut, lap and polish GaSb wafers and can supply an epi-ready surface quality. GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect...
In this paper we review the developments of producing non-polar (i.e. m-plane and a-plane) and semi-polar (i.e. (20.1)-plane) wafers by ammonothermal method. The growth method and polishing results are described. We succeeded in producing 26 mm × 26 mm non- and semi-polar wafers. These wafers possess outstanding structural and optical properties, with threading dislocation density of the order of ...
We investigated the transition energy levels of the vacancy defects in gallium nitride by means of a hybrid density functional theory approach (DFT). We show that, in contrast to predictions from a recent study on the level of purely local DFT, the inclusion of screened exchange stabilizes the triply positive charge state of the nitrogen vacancy for Fermi energies close to the valence band. On the...
Direct wafer bonding technology is able to integrate two smooth wafers and thus can be used in fabricating III–V multijunction solar cells with lattice mismatch. In order to monolithically interconnect between the GaInP/GaAs and InGaAsP/InGaAs subcells, the bonded GaAs/InP heterojunction must be a highly conductive ohmic junction or a tunnel junction. Three types of bonding interfaces were designe...
A micromachined AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with diamondlike carbon/titanium (DLC/Ti) heat-dissipation layers was investigated. Superior thermal conductivity and thermal expansion coefficient similar to that of GaN enabled DLC/Ti to efficiently dissipate the heat of the GaN power HEMT through the Si substrate via holes. This HEMT with DLC design also mainta...
The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits th...
It is still a great challenge for semiconductor based-devices to obtain a large magnetoresistance (MR) effect under a low magnetic field at room temperature. In this paper, the photoinduced MR effects under different intensities of illumination at room temperature are investigated in a semi-insulating gallium arsenide (SI-GaAs)-based Ag/SI–GaAs/Ag device. The device is subjected to the irradiation...
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