To realize high-performance silicon carbide (SiC) power devices, low-resistance ohmic contacts to p-type SiC must be developed. To reduce the ohmic contact resistance, reduction of the barrier height at metal/SiC interfaces or increase in the doping concentration in the SiC substrates is needed. Since the reduction of barrier height is extremely difficult, the increase in the Al doping concentrati...
In this paper, using a fully-coupled, three-dimensional electro-thermal device simulator, we study the mechanism of efficiency degradation at high current operation in planar GaN-based light emitting diodes (LED). In particular, the improvement of the efficiency degradation using thicker conductive GaN substrates has been demonstrated. First, it is found that local Joule heating inside thin conduc...
X-ray topographic and chemical etching examination of Si:Ge single crystals containing 1.2 at% and 3.0 at% Ge, together with precise lattice parameter measurements, was performed. Diffraction contrasts in the form of concentric `quasi-circles' (striations), probably due to the non-uniform distribution of Ge atoms, were observed in projection topographs. The etching patterns reveale...
Using plasma enhanced chemical vapor deposition (PECVD) at 13.56 MHz, a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium (μc-Si1−xGex:H) i-layer. The effects of seeding processes on the growth of μc-Si1−xGex:H i-layers and the performance of μc-Si1−xGex:H p—i—n single junction solar cells are investigated. By applying this seeding method, ...
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