Crystal

Structure

M.P.

Density

Lattice Mis-match to GaN

Thermal Expansion

Growth Tech. .& Max size

Standard substrate size (mm)

^oC

g/cm³

(10^-6/k)

SiC              (6H as example)

Hexagonal

~2700

3.21

3.5 % atori.

10.3

CVD

Ø2" x 0.3,Ø3"x0.3

a=3.073  Å

20x20x0.3,15x15x0.3

c=15.117 Å

Ø3“

10x10x0.3,5x5x0.3

subl.

1 side epi polished

Al₂O₃

Hexagonal

2030

3.97

14% atori.

7.5

CZ

Ø50 x 0.33

a=4.758 Å

Ø25 x 0.50

c=12.99 Å

Ø2”

10x10x0.5

1 or 2 sides epi polished

LiAlO₂

Tetragonal

1900 ~

2.62

1.4 % atori.

/

CZ

10x10x0.5

a=5.17 Å

Ø20 mm

1 or 2 sides epi polished

c=6.26 Å

LiGaO₂

Orthor.

1600

4.18

0.2 % atori.

/

CZ

10x10x0.5

a=5.406 Å

Ø20 mm

1 or 2 sides epi polished

b=5.012Å

c=6.379 Å

MgO

Cubic

2852

3.58

3% atori.

12.8

Flux

2”x2”x 0.5 mm,Ø2” x  0.5   mm

a=4.216 Å

1”x1”x 0.5 mm,Ø1” x  0.5   mm

Ø2"

10 x10x0.5 mm

1 or 2 sides epi polished

MgAl₂O₄

Cubic

2130

3.6

9% atori.

7.45

CZ

Ø2" x 0.5

a=8.083 Å

Ø2“

10x10x0.5

1 or 2 sides epi polished

ZnO

Hexag.

1975

5.605

2.2 % atori.

2.9

Hydro-thermal

20x20x0.5

a=3.325 Å

20mm

1 or 2 sides epi polished

c=5.213 Å

GaN

Hexagonal

6.15

5.59

10x10x0.475mm

5x5x0.475mm