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Structure for InGaAs photodetectors

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Structure for InGaAs photodetectors

2017-09-30

We offer the wafer structure InGaAs photodetectors as follows:

Material

X

Thickness (nm)

Dopant

Doping concentration

InP

1000

N (Sulfur)

3e16

In(x)GaAs

0.53

3000

U/D

5e14

InP

500

N (Sulfur)

3e16

Substrate

SI (Fe)

Source:PAM-XIAMEN


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