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SiC Substrate
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.Hot Tags : 4H SiC 6H SiC SiC Wafer Silicon Carbide Wafer Silicon Carbide Substrate Sic Wafer Price
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SiC Epitaxy
We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.Hot Tags : SiC Epitaxy Epitaxy Deposition Epitaxy Wafer Silicon Carbide Sic Diode
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SiC Wafer Reclaim
PAM-XIAMEN is able to offer the following SiC reclaim wafer services.Hot Tags : Reclaim Wafer Wafer Services Wafer Reclaim Services Wafer Dicing Services Wafer Processing Wafer Reclaim
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SIC Application
Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.Hot Tags : SiC Application Wafer Chip Wafer Etch Silicon Carbide Properties Silicon Carbide Mosfet
Contact Information
+86-592-5601 404