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InP/InGaAs/InP epi wafer

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InP/InGaAs/InP epi wafer

2017-07-18

We can offer 2" InP/InGaAs/InP epi wafer as follows:


InP Substrate:


Indium Phosphide wafers,

P/E 2"dia×350+/-25um,

n-type InP:S

(100)+/-0.5°,

EDP<1E4/cm2.

One-side-polished, back-side matte etched, SEMI Flats.


EPI layer :


Epi 1: InGaAs:(100)

Thickness:100nm,

etching stop layer


Epi 2: InP:(100)

Thickness:50nm,

bonding layer



Source: semiconductorwafers.net


For more information, please visit our website:http://www.semiconductorwafers.net,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.


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