Indium Phosphide (InP) is a key semiconductor material that enables optical systems to deliver the performance required for data center, mobile backhaul, metro and long-haul applications. Lasers, photodiodes and waveguides fabricated on InP operate at the optimum transmission window of glass fiber, which enable efficient fiber communications. PAM-XIAMEN’s proprietary Etched Facet Technology (EFT) allows wafer level testing similar to traditional semiconductor manufacturing. EFT enables high yield, high performance and reliable lasers.

1)2"InP wafer

Orientation:±0.5°

Type/Dopant:N/S;N/Un-doped

Thickness:350±25mm

Mobility:>1700

Carrier Concentration:(2~10)E17

EPD:<50000cm^-2

Polished:SSP

2)1",2"InP wafer

Orientation:±0.5°

Type/Dopant:N/Un-doped

Thickness:350±25mm

Mobility:>1700

Carrier Concentration:(2~10)E17

EPD:<50000cm^-2

Polished:SSP

3)1",2"InP wafer

Orientation:A±0.5°

Type/Dopant:N/S;N/Un-doped

Thickness:350±25mm

Polished:SSP

4)2"InP wafer

Orientation:B±0.5°

Type/Dopant:N/Te;N/Undoped

Thickness:400±25mm;500±25mm

Polished:SSP

5)2"InP wafer

Orientation:(110)±0.5°

Type/Dopant:P/Zn;N/S

Thickness:400±25mm

Polished:SSP/DSP

6)2"InP wafer

Orientation:(211)B;(311)B

Type/Dopant:N/Te

Thickness:400±25mm

Polished:SSP/DSP

7)2"InP wafer

Orientation:(100)2°off+/-0.1 degree t.n. (110)

Type/Dopant:SI/Fe

Thickness:500±20mm

Polished:SSP

8)2" size InGaAs/InP epitaxial wafer,and we accept custom specs.

Substrate: (100) InP substrate

Epi Layer 1: In0.53Ga0.47As layer , undoped , thickness 200 nm

Epi Layer 2: In0.52Al0.48As layer , undoped , thickness 500 nm

Epi Layer 3:In0.53Ga0.47As layer , undoped , thickness 1000 nm

Top Layer :In0.52Al0.48As layer , undoped , thickness 50 nm

Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers the highest purity InGaAs/InP Epitaxial Wafers in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality Indium Phosphide Epitaxial wafers up to 4 inches with wavelengths from 1.7 to 2.6μm, ideally suited for high speed, long wavelength imaging, high speed HBT and HEMTs, APDs and analog-digital converter circuits. Applications using InP-based components can greatly exceed transmission rates in comparison to similar components structured on GaAs or SiGe based platforms.

Relative products:

InAs wafer

InSb wafer

InP wafer

GaAs wafer

GaSb wafer

GaP wafer

Source: semiconductorwafers.net

For more information, please visit our website:http://www.semiconductorwafers.net,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.