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InGaAs photodetectors

InGaAs photodetectors

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InGaAs photodetectors

2018-01-16

Material

X

Thickness (nm)

Dopant

Doping concentration

InP

 

1000

N (Sulfur)

3.00E+16

In(x)GaAs

0.53

3000

U/D

5.00E+14

InP

 

500

N (Sulfur)

3.00E+16

Substrate

 

 

SI (Fe)

 

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