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InGaAs/InP epi wafer for PIN

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InGaAs/InP epi wafer for PIN

2017-07-10

We can offer 2" InGaAs/InP epi wafer for PIN as follows:


InP Substrate:

InP Orientation: (100)

Doped with Fe, Semi-Insulating

wafer Size: 2" diameter

Resistivity:>1x10^7)ohm.cm

EPD:<1x10^4 /cm^2

Single side polished.


EPI layer :

InxGa1-xAs

Nc>2x10^18 /cc (using Si as dopant),

Thickness :0.5 um (+/- 20%)

Roughness of epi-layer, Ra<0.5nm


Source: semiconductorwafers.net


For more information, please visit our website: www.semiconductorwafers.net,

send us email at luna@powerwaywafer.com or powerwaymaterial@gmail.com.

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