Q: We currently working on a project that needs GaAs LED wafer. The ideal structure would be:
(Top) GaAs_n_type/ barrier/Quantum well/barrier/GaAs_p_type/scarified layer/GaAs substrate (bottom). We would need to transfer the LED structure to another substrate by a lift-off process, and the whole LED structrure (from n-type to p-type GaAs) thickness should be around 500 nm. Could you please advise whether you have something that meets our requirement.
A:We thanks for your enquiry. some of our customer also buy our structure for lift-off process, please see below structure
GaAs Epi Wafer for LED/IR series
RED（620+/-5nm）2" GaAs LED wafer
p-GaP
p-AlGaInP
MQW-AlGaInP
n-AlGaInP
DBR n-AlGaAs/AlAs
Buffer
GaAs substrate
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
