The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and their advantages and disadvantages are explored. The basic idea and the theoretical background for a new method of the synthesis of epitaxial SiC films on Si are given. It will be shown that the new method is significantly different from the cl...
It is still a great challenge for semiconductor based-devices to obtain a large magnetoresistance (MR) effect under a low magnetic field at room temperature. In this paper, the photoinduced MR effects under different intensities of illumination at room temperature are investigated in a semi-insulating gallium arsenide (SI-GaAs)-based Ag/SI–GaAs/Ag device. The device is subjected to the irradiation...
The process to decrease the dislocation density in 3-inch Fe-doped InP wafers is described. The crystal growth process is a conventional liquid encapsulated Czochralsky (LEC) but thermal shields have been added in order to decrease the thermal gradient in the growing crystal. The shape of these shields has been optimized with the help of numerical simulations of heat transfer and thermomechanical ...
Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different coverage rates of Ge nanostructures on GaSb are achieved and investigated. It is found the growth of Ge on GaSb follows 2D growth mode. The crystal lattice of the sub-monolayer Ge nanostructures is coherent with that...
This paper proposes a new three-dimensional (3D) photolithography technology for a high-resolution micropatterning process on a fiber substrate. A brief review on the lithography technology of the non-planar surface is also presented. The proposed technology mainly comprises the microfabrication of the 3D exposure module and the spray deposition of thin resist films on the fiber. The 3D exposure m...
Te-doped GaSb single crystals are studied by measuring Hall effect, infrared (IR) transmission and photoluminescence (PL) spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb ...
Ion beam irradiation has been examined as a method for creating nanoscale semiconductor pillar and cone structures, but has the drawback of inaccurate nanostructure placement. We report on a method for creating and templating nanoscale InAs spikes by focused ion beam (FIB) irradiation of both homoepitaxial InAs films and heteroepitaxial InAs on InP substrates. These 'nanospikes' are created as In ...
In this paper, using a fully-coupled, three-dimensional electro-thermal device simulator, we study the mechanism of efficiency degradation at high current operation in planar GaN-based light emitting diodes (LED). In particular, the improvement of the efficiency degradation using thicker conductive GaN substrates has been demonstrated. First, it is found that local Joule heating inside thin conduc...
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