Te-doped GaSb single crystals are studied by measuring Hall effect, infrared (IR) transmission and photoluminescence (PL) spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process.
Source:IOPscience
For more information about our products like silicon nitride crystal structure,float zone wafers,silicon carbide wafer please visit our website: www.semiconductorwafers.net,
Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com