Q: I will use these substrates to grow lasers on them. So, I would need low EPD. What is the lowest possible EPD you could provide? A:If you need it for growing lasers, yes, it should be EPD<500. 3"-size (100)-GaAs, Si-doped and carr. conc. > 0.4e18, single side polished, laser-marked, ~625um thick, EPD<500, EJ or US flat
Q: We would like to ask for below. Gallium Arsenide Wafer, GaAs, VGF (001) +/- 0.5o Orientation N-Type, Silicon doped Carrier Concentration: 1 – 4 x 1018 cm-3 EPD ≤ 5000 cm-2 1 Side Polished (Ra < 10Å), EPI Ready, Back Side Etched US Semi Standard Flats, No Laser Markings Individual spider style wafer cassettes, sealed in N2 gas, Class 1000 Cleanroom Packing, No labels inside of packing 50.8 mm (+/- 0.4 mm) diameter x ≤ 350 microns A: We could supply for above GaAs wafer.
Q:We do need industrial diamond window blanks with optical transmissivity for IR-applications again 1.Diamond blanks Ø4x1.0mm, both surfaces with optical polish,optical grade 2.Please send me some quality information about your diamond materials A:The transmittance% is >70%, and Ra<30nm
Q: I would like to order for the following wafers - SiC, semi-insulating, 0001 surface epi-ready - SiC, n-doped, 0001 surface epi-ready - SiC, semi-insulating, 000-1 (C-terminated) surface epi-ready - SiC, n-doped, 000-1 (C-terminated) surface epi-ready All wafers should be 3" and 4H polytype. What is the micropipe density on the wafers? A: Yes, we can supply. The micropipe density<30
Q:SiC wafer reclaim, can you gurantee surface roughness<=0.3nm? A:Sure, no problem
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC? A:For our semi-insulating SiC substrate, it is V doped, we can not offer High Purity semi-insulating SiC, however we can offer undoped SiC if your quantity is good.
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A:Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing? A:Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below 450W/mK, which are lower the theory value.
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
