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808nm laser wafers

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808nm laser wafers

2017-08-10

Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers providing 808nm AlGaInP/GaAs laser structure wafers.


Layer

Material

X

Y Strain tolerance

PL

Thickness

Type

Level

(ppm)

(nm)

(um)

(cm-3)

8

GaAs

0.1

P

>2.00E19

7

GaIn(x)P

0.49

+/-500

0.05

P

6

[Al(x)Ga]In(y)P

0.3

0.49

+/-500r

1

P

5

GaIn(x)P

0.49

+/-500

0.5

U/D

4

GaAs(x)P

0.86

+/-500

798

0.013

U/D

3

GaIn(x)P

0.49

+/-500

0.5

U/D

2

[Al(x)Ga]In(y)P

0.3

0.49

+/-500

1

N

1

GaAs

0.5

N

0

GaAs substrate

N


Source: PAM-XIAMEN


For more information, please visit our website: www.semiconductorwafers.net,

send us email at luna@powerwaywafer.com or powerwaymaterial@gmail.com.


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