Home / Services / knowledge / 2.Definition of Dimensional Properties,Terminology and Methods of Silicon Carbide Wafer /

2-14.Masking Defects

2.Definition of Dimensional Properties,Terminology and Methods of Silicon Carbide Wafer

2-14.Masking Defects

2018-01-08

also referred to as “Mound”


When one defect prevents the detection of another defect, the undetected defect is called the masked defect.

A distinct raised area above the wafer frontside surface as viewed with diffuse illumination.

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
   
Contact Us Contact Us 
If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.